Product details
IGBT designs that do not require a punch through are the HGTG5N120BND and HGTP5N120BND. They are brand-new IGBTs that are MOS gated for high voltage switching. IGBTs combine the greatest elements of bipolar transistors and MOSFETs. This device combines the low on-state conduction loss of a bipolar transistor with the high input impedance of a MOSFET. The IGBT in use is a TA49308 development type. The TA49058 development type diode is utilized (Part number RHRD6120). The IGBT is appropriate for a variety of high-voltage switching applications that operate at moderate frequencies and require minimal conduction losses, such as drivers for solenoids, relays, and contactors, AC and DC motor controllers, and power supplies.
Features
Its used in switching operation
1200V Switching SOA Capability
Short Circuit Rating
Low leakage current
It has the capability to improved dv/dT
- 100% avalanche energy rated
Specification
| Model | 5N120BND |
| Type | MOSFET |
| Package | TO-247 |
| Forward current | 21A |
| Reverse Voltage | 1200V |
| Tc | 25 Degree centigrade |
| Typical fall time | 175nS |
| Operating and Storage Temperature Range | -55°C TO 150°C |
| Country of Origin | China |
