Product details
The CFF12N65 is an N-channel enhancement mode power MOS field effect transistor made by Silicon using their unique F-Cell TM structure VDMOS technology. The upgraded method and cell structure have been specifically designed to reduce on-state resistance, offer more excellent switching performance, and withstand high energy pulse in the avalanche and commutation mode. These components are frequently found in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Features
It’s used in switching operation
Its maximum reverse voltage is 650
It’s maximum forward current is 12A
Low leakage current
It can improve dv/dT
- 100% avalanche energy rated
Specification
| Model | CFF12N65 |
| Type | MOSFET |
| Package | TO-220-FL |
| Reverse Voltage | 650V |
| Max Drain current | 12A |
| Drain current pulsed | 48A |
| Total power dissipation | 210W |
| Operating and Storage Temperature Range | -55°C TO 150°C |
| Country of Origin | China |
