Product details
These N-Channel enhancement mode power field effect transistors are created using a proprietary planar stripe DMOS process developed by Fairchild. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to minimize on-state resistance, deliver improved switching performance, and withstand high energy pulses. These devices are ideal for active power factor correction and high-efficiency switched mode power supply.
Features
Its forward current is 19A
Its low gate charge is Typically 25nC
Its used for fast switching operation
Its highly reliable, low cost
Its operating voltage is 500V
Specification
| Model | FDA18N50 |
| Type | MOSFET |
| Package | TO-3P |
| Brand | Fairchild |
| Drain Current | 19A |
| Avalanche Current | 19A |
| Total power dissipation | 239W |
| Operating and Storage Temperature Range | -55°C TO 150°C |
| Country of Origin | China |
