Product details
FQPF4N80 2A,800V N-CHANNEL enhancement mode power field effect transistors were created the exclusive planar stripe DMOS process developed by Fairchild.
In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high energy pulses. The high efficiency switch mode power supply is ideal for these devices.
Features
Maximum operating voltage is 800V
Its forward current is 2A
Avalanche tested is 100%
Its used in fast switching applications
- Improved dv/dT capability
- Low gate charge is 19nC
Specification
| Model | FQPF4N80 |
| Type | N-Channel MOSFET |
| Package | TO-220F |
| Forward current | 2A |
| Maximum lead temperature for soldering | 300°C |
| Avalanche current | 2.2A |
| Total power dissipation | 43W |
| Operating and Storage Temperature Range | -55°C TO 150°C |
| Country of Origin | China |
