Product details
STP55NF06 power MOSFETs have been developed using STMicroelectronics’ unique “Single Feature Size” strip-based process, which is specifically designed to minimise input capacitance and gate charge. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics that make it suitable for use as a primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, also for applications where low gate driving charge is required.
Applications:
- High Current, High Switching Speed
- Motor Control
- Audio Amplifier
- DC-DC & DC-AC Converters
- Automotive
Specifications
Model | STP55NF06 |
Brand | STMicroelectronics |
Drain-Source Voltage | 60V DC |
Drain-Gate Voltage | 60V DC |
Gate-Source Voltage | ±20V DC |
Drain Current | 50A @ 25°C, 35A @100°C |
Mounting | Through Hole |
Package | TO-220 |
Pulsed Drain Current | 200A |
Power Dissipation | 30W |
Single Pulse Avalanche Energy | 350mJ |
Operating Temperature | -55°C to 175°C |
Quantity | 1 Pcs |
Country of Origin | China |